At what pressure, in atmospheres, would the number of molecules per unit volume in an ideal gas be equal to the number density of the conduction electrons in copper, with both gas and copper at temperature T =300K?
The pressure value that would give the number of molecules per unit volume in an ideal gas equal to the number density of conduction electrons in copper is .
a) The number of conduction electrons in copper,
b) The temperature value, T =300 K
The equation that relates the characteristic properties of an ideal gas is known as Ideal Gas Equation. The ideal gas equation can be given as-
Here P is the pressure,V is the volume, n id the number of moles and k is the Boltzmann constant.
Using the given condition and data in equation, we can get the value of the pressure in atmospheres as follows:
Hence, the value of the pressure is .
Pure silicon at room temperature has an electron number density in the conduction band of about and an equal density of holes in the valence band. Suppose that one of every silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
The compound gallium arsenide is a commonly used semiconductor, has an energy gap . Its crystal structure is like that of silicon, except that half the silicon atoms are replaced by gallium atoms and half by arsenic atoms. Draw a flattened-out sketch of the gallium arsenide lattice, following the pattern of Fig. 41-10a.What is the net charge of the (a) gallium and (b) arsenic ion core? (c) How many electrons per bond are there? (Hint: Consult the periodic table in Appendix G.)
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