Show that Eq. 41-5 can be written as . (b) Evaluate in terms of meters and electron-volts. (c) Calculate for .
Using the formula of the density of states associated with the conduction electrons of metal, we can get the required value of the density of the state for the given energy and constant values.
From the given equation of density of states of the conduction electrons of a metal, we get that
Hence, the density of the states of conduction electrons is .
We know that
So, considering the equation of kinetic energy the unit of mass is .
Thus, the units of C becomes-
Now, the value of C in meters and electron-volts can be given as:
Hence, the value of C is .
Using the given energy value in equation (a) of density in part (a), we can get the density of the states of the conduction electrons of the metal as follows:
Hence, the value of the density of electrons is .
Figure 41-1a shows 14 atoms that represent the unit cell of copper. However, because each of these atoms is shared with one or more adjoining unit cells, only a fraction of each atom belongs to the unit cell shown. What is the number of atoms per unit cell for copper? (To answer, count up the fractional atoms belonging to a single unit cell.)
A silicon-based MOSFET has a square gate on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is thick and has a dielectric constant of 4.5 . (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate – source potential difference of 1.0V ?
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