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Modern Physics
Found in: Page 1
Modern Physics

Modern Physics

Book edition 2nd Edition
Author(s) Randy Harris
Pages 633 pages
ISBN 9780805303087

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Short Answer

A supersonic: - plane travels al 420m/s. As this plane passes two markers a distance of 4.2km apart on the ground, how will the time interval registered on a very precise clock onboard me plane differ from 10s?

The value of time difference in the plane’s clock is 9.8 ps.

See the step by step solution

Step by Step Solution

Write the given data from the question.

Consider a time difference is Δt=10 s.

Consider a speed of the plane is υ=420ms.

Consider a distance is 4200 m.

Determine the formula of time difference in the plane’s clock.

Write the formula of time difference in the plane’s clock.

Δt0=Δt1υ2c2 …… (1)

Here, Δt is time difference, υ speed of the plane and c speed of light.

Determine the value of time difference in the plane’s clock.

Due to relativistic effects, time relative to an object moves more quickly when it is moving very quickly. The time-dilation equation helps explain this:


Arrive at the following expression for the time difference in the plane's clock using the time-dilation equation:


Calculate the time difference in the clock of the aircraft using the formula for Δt0:

Determine the time difference in the plane’s clock.

Substitute 10 for Δt, 420 for υ and 3×108 for c2 into equation (1).

Δt0=10142023×1082=9.8×1012=9.8 ps

According to the findings, the plane's clock would display the time 9.8 ps earlier.

Most popular questions for Physics Textbooks

71. In many kinds of integrated circuits. the preferred element of amplification/switching is nor the bipolar transistor discussed in the chapter, but the MOSFET (metal oxide semiconductor field effect transistor). Thecompany diagram shows one in its "normally off" state: Conduction electrons cannot flow from the n-type source, which is analogous to the emitter. "over the bump" in the ptype region to the n-type drain. analogous to the collector. (Annpn arrangement is shown. but just as for the bipolar transistor, a pnp would yield the complementary device.) The important difference is that rather than a direct electrical contact to the p-type region, as in the base of the bipolar, the centre lead, the gate, is a conductor bonded to the p-type region but separated by a thin insulating layer.

(a) Explain how applying a bias to the gate can cause this device to tum on. Should the gate bias voltage be positive or negative (relative to the source)? Why is the control mechanism referred to as "field effect"?

(b) The MOSFET is often said to be a "unipolar" device because valence holes (conduction elections in the pnp device) do not play the important role that they do in the bipolar. Explain. Would you expect a significant current through the gate due to electron-hole recombination in the p-type region? Why or why not?

(c) A low-input-impedance device is one in which there are large oscillations in input current for small oscillations in the input voltage. Correspondingly, a highinput-impedance device has a small input currentfor a large input voltage. Bearing in mind that the voltage across the forward-biased base-emitter diode of a bipolar transistor is always about Egape , while the input current is proportional to the output current, would you say that the bipolar transistor has low or high input impedance? What about the MOSFET?


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